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Bulletin I25185/B
ST083S SERIES
INVERTER GRADE THYRISTORS Stud Version
Features
All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance
85A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM/V RRM tq range (*) TJ
ST083S
85 85 135 2450 2560 30 27 400 to 1200 10 to 30 - 40 to 125
Units
A C A A A KA2s KA2s V s C
case style TO-209AC (TO-94)
(*) tq = 10 to 20s for 400 to 800V devices t = 15 to 30s for 1000 to 1200V devices q
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ST083S Series
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
04 08 ST083S 10 12
Index
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V DRM/V RRM , maximum repetitive peak voltage V
400 800 1000 1200
VRSM , maximum non-repetitive peak voltage V
500 900 1100 1300
I DRM/I RRM max.
@ TJ = TJ max.
mA
30
Current Carrying Capability
Frequency
180o el 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 210 200 150 70 50 V DRM 50 60
ITM 180o el 120 120 80 25 50 50 85 330 350 320 220 50 V DRM 60
ITM 100s 270 210 190 85 50 85 2540 1190 630 250 50 VDRM 60
ITM
Units
1930 810 400 100 50 85 V A/s C A
22 / 0.15F
22 / 0.15F
22 / 0.15F
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one half cycle, non-repetitive surge current
ST083S
85 85 135 2450 2560 2060 2160
Units Conditions
A C DC @ 77C case temperature t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2s t = 10ms t = 8.3ms KA s
2
180 conduction, half sine wave
No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
It
2
Maximum I t for fusing
2
30 27 21 19
I t
2
Maximum I t for fusing
2
300
t = 0.1 to 10ms, no voltage reapplied
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ST083S Series
On-state Conduction
Parameter
V TM V T(TO)1 Max. peak on-state voltage Low level value of threshold voltage
ST083S
2.15 1.46 1.52 2.32
Units
Conditions
ITM= 300A, TJ = TJ max, tp = 10ms sine wave pulse
V
(16.7% x x IT(AV) < I < x I T(AV)), TJ = TJ max. (I > x IT(AV) ), TJ = TJ max. (16.7% x x IT(AV) < I < x I T(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max.
V T(TO)2 High level value of threshold voltage r t1 r t2 IH IL Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current
m 2.34 600 1000 mA
T J = 25C, I T > 30A T J = 25C, V A= 12V, Ra = 6, I G = 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time
ST083S
1000 0.80 Min 10 Max 30
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 100A, commutating di/dt = 10A/s VR = 50V, tp = 200s, dv/dt: see table in device code
s
Max. turn-off time (*)
(*) tq = 10 to 20s for 400 to 800V devices; tq = 15 to 30s for 1000 to 1200V devices.
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST083S
500 30
Units
V/ s mA
Conditions
TJ = TJ max., linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM /V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST083S
40 5 5 20
Units
W A
Conditions
TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -VGM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
TJ = TJ max, tp 5ms
TJ = 25C, VA = 12V, Ra = 6 V mA V TJ = TJ max, rated VDRM applied
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ST083S Series
Thermal and Mechanical Specifications
Parameter
TJ Tstg RthJC RthCS T Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque, 10%
Index
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ST083S
-40 to 125 -40 to 150 0.195 0.08 15.5 (137) 14 (120)
Units
C
Conditions
DC operation K/W Nm (Ibf-in) Nm (Ibf-in) g See Outline Table Non lubricated threads Lubricated threads Mounting surface, smooth, flat and greased
wt
Approximate weight Case style
130
TO-209AC (TO-94)
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction
0.034 0.041 0.052 0.076 0.126
Rectangular conduction Units
0.025 0.042 0.056 0.079 0.127 K/W
Conditions
TJ = TJ max.
Ordering Information Table
Device Code
ST
1
08
2
3
3
S
4
12
5
P
6
F
7
K
8
0
9 10
1 2 3 4 5 6 7 8 9
- Thyristor - Essential part number - 3 = Fast turn off - S = Compression bonding Stud - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) - P = Stud Base 1/2" 20UNF - Reapplied dv/dt code (for t q Test Condition) - tq code - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) dv/dt - tq combinations available
dv/dt (V/s) 20 10 CN 12 CM 15 CL up to 800V 18 CP 20 CK t (s) q 15 18 only for 20 1000/1200V 25 30 *Standard part number. All other types available t (s) q CL CP CK CJ -50 DN DM DL DP DK -DP DK DJ DH 100 EN EM EL EP EK -EP EK EJ EH 200 FN * FM * FL FP * FK * -FP * FK * FJ FH 400 HN HM HL HP HK --HK HJ HH
10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection)
To Order
only on request.
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ST083S Series
Outline Table
CERAMIC HOUSING
16.5 (0.65) MAX.
37 )M IN (0.
8.5 (0.33) DIA. 4.3 (0.17) DIA
2.6 (0.10) MAX.
FLEXIBLE LEAD C.S. 16mm 2 (.025 s.i.)
RED SILICON RUBBER 157 (6.18) 170 (6.69) RED CATHODE
C.S. 0.4 mm 2 (.0006 s.i.)
20
( 0. 79)
MI N.
9.5
.
WHITE GATE
Fast-on Terminals AMP. 280000-1 REF-250
215 (8.46) 70 (2.75) MIN. RED SHRINK 29 (1.14) MAX. WHITE SHRINK
10 (0.39)
22.5 (0.88) MAX. DIA. 12.5 (0.49) MAX.
21 (0.83)
MAX.
SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX.
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
CERAMIC HOUSING FLAG TERMINALS
22.5 DIA. (0.89) MAX. 1.5 (0.06) DIA. 10 (0.39) 5.2 (0.20) DIA.
46 (1.81)
49 (1.93)
7.5 (0.30)
12.5 (0.49)
21(0.83)
MAX.
Case Style TO-208AD (TO-83)
All dimensions in millimeters (inches)
MAX.
1/2"-20UNF-2A
SW 27
29 (1.14) MAX.
2.4 (0.09) 29.5 (1.16)
To Order
(0.65)
16.5
10 (0.39)
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ST083S Series
Maximum Allowable Case T emperature (C)
Index
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Maximum Allowable Case T emperature (C)
130 S 083S S T eries RthJC (DC) = 0.195 K/ W 120
130 120 110
S 083S S T eries RthJC (DC) = 0.195 K/ W
110
Conduc tion Angle
Conduction Period
100 90 30 80 70 0 20 40 60 80 100 120 140 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 60 90 120 180 DC
100
90
30
60 90 120 180
80 0 10 20 30 40 50 60 70 80 90 Average On-s tate Current (A) Fig. 1 - Current Ratings Characteristics Maximum Average On-state Power Los (W) s 180
hS Rt
2 0.
160 140 120 100 80 60 40 20 0 0
180 120 90 60 30 RMS Limit
W K/
0. 4K /W 0. 5K /W
0.8 K/ W
1.2 K/ W
3 0. W K/
A
K/ W .1 =0 ta el -D R
Conduction Angle
S 083S S T eries T = 125C J 10 20 30 40 50 60 70 80 90 25 50 75 100 125
Average On-s tate Current (A)
Maximum Allowable Ambient T emperature (C)
Fig. 3 - On-state Power Loss Characteristics Maximum Average On-s tate Power L (W) oss 250 DC 180 120 90 60 30
R
th A S
200
0. 2
= 1 0. /W K
K/ W
150
K/ W 0.4 K/ 0.5 W K /W
0. 3
lt a De R
100 RMS Limit
Conduction Period
0.8 K/ W
1.2 KW /
50
S 083S S T eries T = 125C J
0 0 20 40 60 80 100 120 25 140 50 75 100 125 Average On-s tate Current (A) Maximum Allowable Ambient T emperature (C)
Fig. 4 - On-state Power Loss Characteristics
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ST083S Series
Peak Half S Wave On-state Current (A) ine
2000 1800 1600 1400 1200 1000 1
At Any Rated Load Condition And With Rated VRR Applied F ollowing S urge. M Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s
Peak Half S Wave On-s ine tate Current (A)
2200
2600
Maximum Non R epetitive S urge Current Vers Pulse T us rain Duration. Control 2400 Of Conduction May Not Be Maintained. Initial T = 125C J 2200 No Voltage R eapplied R ated VRR R 2000 M eapplied 1800 1600 1400 1200 S 083S S T eries
S 083S S T eries
10
100
1000 0.01
0.1 Puls T e rain Duration (s)
1
Number Of Equal Amplitude Ha lf Cyc le Current Pulses (N)
Fig. 5 - Maximum Non-repetitive Surge Current T rans ient Thermal Impedanc e Z thJC (K/W) 10000 Instantaneous On-state Current (A)
Fig. 6 - Maximum Non-repetitive Surge Current 1 S teady S tate Value RthJC = 0.195 K/ W (DC Operation)
T = 25C J 1000 T = 125C J
0.1
S T083SS eries
S 083S S T eries
100 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics Maximum R evers R e ecovery Charge - Qrr (C) 160 140 120
200 A
0.01 0.001
0.01
0.1
1
10
S quare Wave Puls Duration (s) e Fig. 8 - Thermal Impedance Z thJC Characteristic Maximum Revers R overy Current - Irr (A) e ec 120 110 100 90 80 70 60 50 40 30 20 10 10 20 30 40 50 S 083SS T eries T = 125 C J
S 083S S T eries T = 125 C J
IT = 500 A M 300 A
I T = 500 A M 300 A 200 A 100 A 50 A
100
100 A
80 60
50 A
40 20 10 20 30 40 50 60 70 80 90 100 R ate Of Fall Of On-s tate Current - di/d t (A/ s ) Fig. 9 - Reverse Recovered Charge Characteristics
60 70 80 90 100
To Order
R ate Of F Of F all orward Current - di/ dt (A/s) Fig. 10 - Reverse Recovery Current Characteristics
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ST083S Series
1E4
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Peak On-s te Current (A) ta
S nub ber circuit Rs = 22 ohms Cs = 0.15 F VD = 80% VDRM
S nubb er circ uit Rs = 22 ohms Cs = 0.15 F V D = 80%VDR M
1E3
1500 1000 500 400 200 2000 2500 3000 100 50 Hz 1500 2000 2500 S 083SS T eries S inusoidal pulse T = 60C C 3000 tp S 083SS T eries S inusoidal pulse T = 85C C 1000 500 400 200 100 50 Hz
1E2
tp
1E1 1E 1
1E 2
1E3
1E1E1 1 1E 4 1E 4
1E2
1E3
1E4
Puls Basewidth (s) e Fig. 11 - Frequency Characteristics 1E4
S nub ber c ircuit Rs = 22 ohms Cs = 0.15 F V D = 80% VDRM
Pulse Ba sewid th (s)
Peak On-state Current (A)
tp
S 083SS T eries T rapezoidal p ulse T = 85C C di/dt = 50A/s
S nubber circuit R s = 22 ohms C s = 0.15 F V D = 80% VDRM
1E3
200 100 50 Hz 500 400 1000 1500 S 083SS T eries T rapezoid al pulse T = 60C C di/ dt = 50A/ s 2000 2500
1500
1000
500
400
200
100
50 Hz
1E2
3000
2000 2500
tp
1E1 1E1
1E 2
1E3
1E 1E 4 1E 41E1 1
1E2
1E3
1E4
Pulse Bas ewidth (s ) Fig. 12 - Frequency Characteristics 1E4
S nubber circuit Rs = 22 ohms Cs = 0.15 F V D = 80% VDRM
Pulse Basewidth (s)
Pea k On-s ate Current (A) t
tp
S 083SS T eries T rapezoidal pulse T = 85C C di/ dt = 100A/ s
S nubber circuit R s = 22 ohms C s = 0.15 F V D = 80% VDRM
1E3
400 200 100 50 Hz 500 1000 S 083SS T eries T rapezoidal pulse T = 60C C di/dt = 100A/ s 1500 2000 2500 400 200 100 50 Hz
1E2
1000 1500 2000 2500 3000
500
tp
1E1 1E1
1E2
1E3
1E1E1 1 1E 4 1E 4
1E2
1E3
1E4
Puls Basewidth (s) e Fig. 13 - Frequency Characteristics
Puls Bas e ewidth (s )
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ST083S Series
1E4
20 joules per pulse 10 S 083SS T eries R ectangular pulse di/ dt = 50A/ s 20 joules p er pulse 7.5 2 1 0.5 0.1 0.3 0.2 0.1 S 083SS T eries S inusoidal pulse tp 4
Peak On-state Current (A)
1E3
0.3 0.2
0.5
1
23
5
tp
1E2
1E1 1E 1
1E 2
1E3
1E4 1E 1E4 1E 1 1
1E 2
1E 3
1E4
Puls Basewidth (s) e
Puls Bas e ewidth (s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics 100 Insta nt an eo us Ga te Volta g e (V) Rec ta ng ula r ga te p ulse a ) Rec om me nd e d lo a d line for rate d d i/ d t : 20V, 10o hms; tr<=1 s b ) Rec om mend ed loa d line fo r <=30% ra ted d i/ d t : 10V, 10ohm s 10 tr<=1 s (b )
T j=-40 C T j=25 C T j=125 C
(1) PGM (2) PGM (3) PGM (4) PGM (a )
= 10W, = 20W, = 40W, = 60W,
tp tp tp tp
= 20ms = 10ms = 5m s = 3.3m s
1 VGD IGD 0.1 0.001 0.01
(1)
(2)
(3) (4)
Devic e: S T083S Series 0.1 1
Freq uenc y Lim ited b y PG(AV) 10 100
Inst ant a ne ous Ga te C urrent (A) Fig. 15 - Gate Characteristics
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